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Nucleation control for the growth of vertically aligned GaN nanowires
Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matc...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2012
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3432621/ https://ncbi.nlm.nih.gov/pubmed/22768872 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-373 |
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