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Nucleation control for the growth of vertically aligned GaN nanowires
Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matc...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3432621/ https://ncbi.nlm.nih.gov/pubmed/22768872 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-373 |
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