טוען...
Nucleation control for the growth of vertically aligned GaN nanowires
Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matc...
שמור ב:
| Main Authors: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2012
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3432621/ https://ncbi.nlm.nih.gov/pubmed/22768872 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-373 |
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