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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and di...

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Bibliographic Details
Main Authors: Ha, Ryong, Kim, Sung-Wook, Choi, Heon-Jin
Format: Artigo
Language:Inglês
Published: Springer 2013
Subjects:
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC3720202/
https://ncbi.nlm.nih.gov/pubmed/23803283
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-299
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