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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and di...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3720202/ https://ncbi.nlm.nih.gov/pubmed/23803283 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-299 |
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