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Atomic characterization of Si nanoclusters embedded in SiO(2 )by atom probe tomography

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composit...

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Bibliografski detalji
Glavni autori: Roussel, Manuel, Talbot, Etienne, Gourbilleau, Fabrice, Pareige, Philippe
Format: Artigo
Jezik:Inglês
Izdano: Springer 2011
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211216/
https://ncbi.nlm.nih.gov/pubmed/21711666
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-164
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