טוען...
Atomic characterization of Si nanoclusters embedded in SiO(2 )by atom probe tomography
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composit...
שמור ב:
| Main Authors: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2011
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211216/ https://ncbi.nlm.nih.gov/pubmed/21711666 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-164 |
| תגים: |
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