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Atomic characterization of Si nanoclusters embedded in SiO(2 )by atom probe tomography
Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composit...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211216/ https://ncbi.nlm.nih.gov/pubmed/21711666 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-164 |
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