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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiO(x)N(y )and SiO(2 )films
We examined and compared the electrical properties of silica (SiO(2)) and silicon oxynitride (SiO(x)N(y)) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211223/ https://ncbi.nlm.nih.gov/pubmed/21711698 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-170 |
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