טוען...
Electrical behavior of MIS devices based on Si nanoclusters embedded in SiO(x)N(y )and SiO(2 )films
We examined and compared the electrical properties of silica (SiO(2)) and silicon oxynitride (SiO(x)N(y)) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering...
שמור ב:
| Main Authors: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2011
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211223/ https://ncbi.nlm.nih.gov/pubmed/21711698 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-170 |
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