Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric deep level transient spectroscopy
Siloxane passivated, undoped semi-insulting GaAs samples exhibit a smaller emission time constant in photothermal radiometric signal decay than untreated samples. Surface photovoltage and photoluminescence results for the passivated sample indicate an upwards surface band bending which induces hole...
Gorde:
| Argitaratua izan da: | Superficies y vacío |
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| Egile Nagusiak: | , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Gaiak: | |
| Sarrera elektronikoa: | https://www.redalyc.org/articulo.oa?id=94211324004 |
| Etiketak: |
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