Modeling Chaotic Current Oscillations in Semi-Insulating GaAs with Rate-Equations of Impact Ionization and Field-Enhanced Trapping
We investigated the effect of adding the field-dependent recombination process, namely field-enhanced trapping,to the generation-recombination processes of charge carriers that model current oscillations in semiconductors.The main new features arising from this modification are identified in bifurca...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2006
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46436303 |
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