Hall Effect in InAs/GaAs Superlattices with Quantum Dots: Identifying the Presence of Deep Level Defects
We have carried out van der Pauw resistivity and Hall effect measurements on a series of Molecular BeamEpitaxy InAs/GaAs superlattice samples containing InAs quantum dots. Three growth parameters were varied,the InAs coverage, the number of repetitions of the InAs/GaAs layers, and the GaAs spacer th...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Brazilian Journal of Physics |
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| Prif Awduron: | , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
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Sociedade Brasileira de Física
2004
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=46434423 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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