Hall Effect in InAs/GaAs Superlattices with Quantum Dots: Identifying the Presence of Deep Level Defects

We have carried out van der Pauw resistivity and Hall effect measurements on a series of Molecular BeamEpitaxy InAs/GaAs superlattice samples containing InAs quantum dots. Three growth parameters were varied,the InAs coverage, the number of repetitions of the InAs/GaAs layers, and the GaAs spacer th...

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Veröffentlicht in:	Brazilian Journal of Physics
Hauptverfasser:	A. G. de Oliveira, R.M. Rubinger, G.M. Ribeiro, H.A. Albuquerque, R.L. da Silva, W. N. Rodrigues, M. V. B. Moreira
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Sociedade Brasileira de Física 2004
Schlagworte:	Física, Astronomía y Matemáticas
Online-Zugang:	https://www.redalyc.org/articulo.oa?id=46434423
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