Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric deep level transient spectroscopy
Siloxane passivated, undoped semi-insulting GaAs samples exhibit a smaller emission time constant in photothermal radiometric signal decay than untreated samples. Surface photovoltage and photoluminescence results for the passivated sample indicate an upwards surface band bending which induces hole...
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| Udgivet i: | Superficies y vacío |
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| Principais autores: | , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Fag: | |
| Online adgang: | https://www.redalyc.org/articulo.oa?id=94211324004 |
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