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RBS and TEM studies of strain in epitaxially grown CaF2 on Si(111)
In recent years strained layers in epitaxial systems relevant for microelectronic applications have found increasing attention. Due to strain effects the lattice parameters in epitaxial films are changed with reference to those of the bulk material. This allows to design material combinations with n...
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94200944 |
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