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ZnSe epitaxial films grown by MBE on nitrogen treated Si(111) substrates
We have prepared ZnSe epilayers by pulsed molecular beam epitaxy (MBE) on Si(111) substrates, irradiated with a plasma of nitrogen (N-plasma) prior to the deposition. These samples were compared with ZnSe epilayers prepared by conventional MBE directly on untreated Si substrates. The reflection h...
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| Publicat a: | Superficies y vacío |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94211324010 |
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