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ZnSe epitaxial films grown by MBE on nitrogen treated Si(111) substrates

We have prepared ZnSe epilayers by pulsed molecular beam epitaxy (MBE) on Si(111) substrates, irradiated with a plasma of nitrogen (N-plasma) prior to the deposition. These samples were compared with ZnSe epilayers prepared by conventional MBE directly on untreated Si substrates. The reflection h...

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Détails bibliographiques
Publié dans:Superficies y vacío
Auteurs principaux: V. H. Méndez-García, M. López-López, I. Hernández-Calderón
Format: Artigo
Langue:Inglês
Publié: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
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Accès en ligne:https://www.redalyc.org/articulo.oa?id=94211324010
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