Epitaxial graphene on cubic SiC(111)∕Si(111) substrate

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)∕Si(111) substrate. X-ray photoelectron spectroscopy...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T., Zielinski, M.
Format: Artigo
Langue:Inglês
Publié: American Institute of Physics 2010
Sujets:
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC2881931/
https://ncbi.nlm.nih.gov/pubmed/20531979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3427406
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires