Epitaxial graphene on cubic SiC(111)∕Si(111) substrate

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)∕Si(111) substrate. X-ray photoelectron spectroscopy...

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Detalhes bibliográficos
Main Authors: Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T., Zielinski, M.
Formato: Artigo
Idioma:Inglês
Publicado em: American Institute of Physics 2010
Assuntos:
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2881931/
https://ncbi.nlm.nih.gov/pubmed/20531979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3427406
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