Epitaxial graphene on cubic SiC(111)∕Si(111) substrate

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)∕Si(111) substrate. X-ray photoelectron spectroscopy...

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Hlavní autoři: Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T., Zielinski, M.
Médium: Artigo
Jazyk:Inglês
Vydáno: American Institute of Physics 2010
Témata:
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC2881931/
https://ncbi.nlm.nih.gov/pubmed/20531979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3427406
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