Caricamento...

Epitaxial graphene on cubic SiC(111)∕Si(111) substrate

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)∕Si(111) substrate. X-ray photoelectron spectroscopy...

Descrizione completa

Salvato in:
Dettagli Bibliografici
Autori principali: Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T., Zielinski, M.
Natura: Artigo
Lingua:Inglês
Pubblicazione: American Institute of Physics 2010
Soggetti:
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC2881931/
https://ncbi.nlm.nih.gov/pubmed/20531979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3427406
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !