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Epitaxial graphene on cubic SiC(111)∕Si(111) substrate
Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)∕Si(111) substrate. X-ray photoelectron spectroscopy...
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| Main Authors: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Institute of Physics
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2881931/ https://ncbi.nlm.nih.gov/pubmed/20531979 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3427406 |
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