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Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to...

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Detalhes bibliográficos
Main Authors: Perova, TS, Wasyluk, J, Kukushkin, SA, Osipov, AV, Feoktistov, NA, Grudinkin, SA
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2010
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2920427/
https://ncbi.nlm.nih.gov/pubmed/20730078
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9670-6
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