Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition

We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minut...

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Enregistré dans:
Détails bibliographiques
Publié dans:Nanoscale Res Lett
Auteurs principaux: Zhang, Zhiwei, Cai, Weiwei, Hong, Rongdun, Lin, Dingqu, Chen, Xiaping, Cai, Jiafa, Wu, Zhengyun
Format: Artigo
Langue:Inglês
Publié: Springer US 2018
Sujets:
Nano Express
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6033842/
https://ncbi.nlm.nih.gov/pubmed/29978387
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2606-2
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