A carregar...

Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC s...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Chong, Laiyuan, Guo, Hui, Zhang, Yuming, Hu, Yanfei, Zhang, Yimen
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://ncbi.nlm.nih.gov/pubmed/30841583
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9030372
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!