Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC s...

Full description

Saved in:
Bibliographic Details
Published in:Nanomaterials (Basel)
Main Authors: Chong, Laiyuan, Guo, Hui, Zhang, Yuming, Hu, Yanfei, Zhang, Yimen
Format: Artigo
Language:Inglês
Published: MDPI 2019
Subjects:
Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://ncbi.nlm.nih.gov/pubmed/30841583
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9030372
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items