Načítá se...
Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC
Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-pow...
Uloženo v:
| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6747865/ https://ncbi.nlm.nih.gov/pubmed/31450728 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12172696 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|