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Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC
Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-pow...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6747865/ https://ncbi.nlm.nih.gov/pubmed/31450728 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12172696 |
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