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Insulator-quantum Hall transitionin monolayer epitaxial graphene
We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρ(xx), which are signatures of the insulator-quantum Hall (I-QH) transition, in all three d...
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| Gepubliceerd in: | RSC Adv |
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| Hoofdauteurs: | , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
2016
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5134328/ https://ncbi.nlm.nih.gov/pubmed/27920902 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1039/C6RA07859A |
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