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Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature depend...

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Detalhes bibliográficos
Publicado no:2d Mater
Main Authors: Liu, Chieh-Wen, Chuang, Chiashain, Yang, Yanfei, Elmquist, Randolph E., Ho, Yi-Ju, Lee, Hsin-Yen, Liang, Chi-Te
Formato: Artigo
Idioma:Inglês
Publicado em: 2017
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5535274/
https://ncbi.nlm.nih.gov/pubmed/28775850
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/2053-1583/aa55b9
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