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Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC
We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature depend...
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| Publicado en: | 2d Mater |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5535274/ https://ncbi.nlm.nih.gov/pubmed/28775850 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/2053-1583/aa55b9 |
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