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Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition
We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minut...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6033842/ https://ncbi.nlm.nih.gov/pubmed/29978387 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2606-2 |
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