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Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using d...
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| Auteurs principaux: | , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer
2010
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2991215/ https://ncbi.nlm.nih.gov/pubmed/21170403 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9731-x |
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