Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Por Abe, Shunsuke, Handa, Hiroyuki, Takahashi, Ryota, Imaizumi, Kei, Fukidome, Hirokazu, Suemitsu, Maki
Publicado em 2010

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Por Kim, Tae-Youb, Huh, Chul, Park, Nae-Man, Choi, Cheol-Jong, Suemitsu, Maki
Publicado em 2012

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact

Por Fukidome, Hirokazu, Kotsugi, Masato, Nagashio, Kosuke, Sato, Ryo, Ohkochi, Takuo, Itoh, Takashi, Toriumi, Akira, Suemitsu, Maki, Kinoshita, Toyohiko
Publicado em 2014

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Por Hasegawa, Mika, Sugawara, Kenta, Suto, Ryota, Sambonsuge, Shota, Teraoka, Yuden, Yoshigoe, Akitaka, Filimonov, Sergey, Fukidome, Hirokazu, Suemitsu, Maki
Publicado no Nanoscale Res Lett (2015)

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

Por Fukidome, Hirokazu, Ide, Takayuki, Kawai, Yusuke, Shinohara, Toshihiro, Nagamura, Naoka, Horiba, Koji, Kotsugi, Masato, Ohkochi, Takuo, Kinoshita, Toyohiko, Kumighashira, Hiroshi, Oshima, Masaharu, Suemitsu, Maki
Publicado em 2014