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P-type doping in a-Si1-xCx:H obtained by PECVD
In previous works we have pointed out the importance of the so called silane starving plasma condition on the optical, chemical and structural properties of a-Si1-xCx:H obtained by standard radio frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) technique from Silane (SiH4) and Methane (...
Gorde:
| Argitaratua izan da: | Superficies y vacío |
|---|---|
| Egile Nagusiak: | , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Gaiak: | |
| Sarrera elektronikoa: | https://www.redalyc.org/articulo.oa?id=94200931 |
| Etiketak: |
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