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High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2
In this paper, we present results of the deposition rates and the characterization of a-Si:H layers deposited from pure SiH4 in a 13.56 MHz Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, where the use of parallel plates of equal area, long gas residence as well as the optimization of p...
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| Publicado no: | Superficies y vacío |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94200981 |
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