Quantum confined Stark effect in n-type delta-doped quantum wells
Electronic states in Si±-doped GaAs quantum wells with an electric field applied perpendicular to the layers have been studied. Thomas-Fermi approximation for the self-consistent external potential in the tight binding model and a spin-dependentsp3s§basis with nearestneighbours is used. The inhomo...
-д хадгалсан:
| -д хэвлэсэн: | Revista Mexicana de Física |
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| Үндсэн зохиолчид: | , , , |
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Sociedad Mexicana de Física A.C.
2007
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.redalyc.org/articulo.oa?id=57036163015 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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