Quantum confined Stark effect in n-type delta-doped quantum wells
Electronic states in Si±-doped GaAs quantum wells with an electric field applied perpendicular to the layers have been studied. Thomas-Fermi approximation for the self-consistent external potential in the tight binding model and a spin-dependentsp3s§basis with nearestneighbours is used. The inhomo...
保存先:
| 出版年: | Revista Mexicana de Física |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Física A.C.
2007
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=57036163015 |
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