Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure
The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented.The effects of hydrostatic pressure on the band structure are taken into account specially when the host materialbecomes an indirect gap one. The results suggest that under the applied press...
I tiakina i:
| I whakaputaina i: | Brazilian Journal of Physics |
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| Ngā kaituhi matua: | , |
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Sociedade Brasileira de Física
2006
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| Ngā marau: | |
| Urunga tuihono: | https://www.redalyc.org/articulo.oa?id=46436518 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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