Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitrideand indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitridenanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations o...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2006
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46436507 |
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