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Effect of GaN substrate thickness on the optical field of InGaN laser diodes

In this work the influence of GaN substrate thickness on the near and far-field patterns of InGaN lasers structures is numerically studied. In simulation a typical structure with an InGaN-MQW active region, GaN waveguide and AlxGa1−xN cladding layers is considered. A fluctuating behavior was obtaine...

Täydet tiedot

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Bibliografiset tiedot
Julkaisussa:Revista Mexicana de Física
Päätekijät: J. A. Martín, M. Sanchez
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Sociedad Mexicana de Física A.C. 2018
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Linkit:https://www.redalyc.org/articulo.oa?id=57082913008
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