Effect of GaN substrate thickness on the optical field of InGaN laser diodes
In this work the influence of GaN substrate thickness on the near and far-field patterns of InGaN lasers structures is numerically studied. In simulation a typical structure with an InGaN-MQW active region, GaN waveguide and AlxGa1−xN cladding layers is considered. A fluctuating behavior was obtaine...
Tallennettuna:
| Julkaisussa: | Revista Mexicana de Física |
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| Päätekijät: | , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Sociedad Mexicana de Física A.C.
2018
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| Aiheet: | |
| Linkit: | https://www.redalyc.org/articulo.oa?id=57082913008 |
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