Cargando...

Effect of GaN substrate thickness on the optical field of InGaN laser diodes

In this work the influence of GaN substrate thickness on the near and far-field patterns of InGaN lasers structures is numerically studied. In simulation a typical structure with an InGaN-MQW active region, GaN waveguide and AlxGa1−xN cladding layers is considered. A fluctuating behavior was obtaine...

Descrición completa

Gardado en:
Detalles Bibliográficos
Publicado en:Revista Mexicana de Física
Main Authors: J. A. Martín, M. Sanchez
Formato: Artigo
Idioma:Inglês
Publicado: Sociedad Mexicana de Física A.C. 2018
Assuntos:
Acceso en liña:https://www.redalyc.org/articulo.oa?id=57082913008
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!