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Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN

In this work, we have calculated ab initio the phonon dynamics of the Ga-rich GaAs (100) (1 £ 1), GaAs (100)(2 £ 1), GaN (100) (1 £ 1), GaAs (110) and GaN (110) surfaces. Our results for the (100) surfaces showthat, while the (2 £ 1) reconstruction is characterized by dimer vibrations, the (1 £ 1) r...

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Bibliografske podrobnosti
izdano v:Brazilian Journal of Physics
Main Authors: A. M. Santos, J. L. A. Alves, J. R. Leite, H. W. Alves Leite, L. M. R. Scolfaro
Format: Artigo
Jezik:Inglês
Izdano: Sociedade Brasileira de Física 2004
Teme:
Online dostop:https://www.redalyc.org/articulo.oa?id=46434420
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