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Structural and Electronic Properties of the SiC (100) Surfaces

In this work, we present our preliminary ab initio results for the structural and electronic properties of bothSi- and C-terminated SiC (100) surfaces in (2£1) and c(2£2) reconstruction patterns. Based on our results, wefound that the Si-terminated surfaces are dominated by weak bonded Si-dimers, wh...

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Veröffentlicht in:Brazilian Journal of Physics
Hauptverfasser: J. S. Soares, H. W. Alves
Format: Artigo
Sprache:Inglês
Veröffentlicht: Sociedade Brasileira de Física 2006
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Online-Zugang:https://www.redalyc.org/articulo.oa?id=46436317
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