Structural and Electronic Properties of the SiC (100) Surfaces
In this work, we present our preliminary ab initio results for the structural and electronic properties of bothSi- and C-terminated SiC (100) surfaces in (2£1) and c(2£2) reconstruction patterns. Based on our results, wefound that the Si-terminated surfaces are dominated by weak bonded Si-dimers, wh...
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| Опубликовано в:: | Brazilian Journal of Physics |
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| Главные авторы: | , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Sociedade Brasileira de Física
2006
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| Предметы: | |
| Online-ссылка: | https://www.redalyc.org/articulo.oa?id=46436317 |
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