Carregant...
Initial Growth of GaN and InN Over GaAs (110) Substrates
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces basedon parameter-free, self-consistent total energy and force calculations using the density functional theory. Weanalyzed the changes in the bond-lengths and in the bond-angles before and after de...
Guardat en:
| Publicat a: | Brazilian Journal of Physics |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2004
|
| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46434417 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|