Initial Growth of GaN and InN Over GaAs (110) Substrates
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces basedon parameter-free, self-consistent total energy and force calculations using the density functional theory. Weanalyzed the changes in the bond-lengths and in the bond-angles before and after de...
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| Pubblicato in: | Brazilian Journal of Physics |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedade Brasileira de Física
2004
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=46434417 |
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