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Tohutoro APA (7th ed.)
Leite, H. W. A., Paiva, A. d., & Alves, J. L. A. (2004). Initial Growth of GaN and InN Over GaAs (110) Substrates. Brazilian Journal of Physics.
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Tohutoru Kātū Chicago (17th ed.)
Leite, H. W. Alves, A. de Paiva, me J. L. A. Alves. "Initial Growth of GaN and InN Over GaAs (110) Substrates."
Brazilian Journal of Physics 2004.
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Tohutoro MLA (9th ed.)
Leite, H. W. Alves, et al. "Initial Growth of GaN and InN Over GaAs (110) Substrates."
Brazilian Journal of Physics, 2004.
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