Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study

First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adso...

Full beskrivning

Bibliografiska uppgifter

Huvudupphov:	J. H. Camacho-García, Ma L. Ruiz-Peralta, G. Hernández-Cocoletzi, A. Bautista-Hernández, M. Salazar-Villanueva, A. Escobedo-Morales, E. Chigo-Anota, J. C. Moreno-Hernández
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	Wiley 2022-01-01
Serie:	Advances in Condensed Matter Physics
Länkar:	http://dx.doi.org/10.1155/2022/1506702
Taggar:	Lägg till en tagg Inga taggar, Lägg till första taggen!