Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study
First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adso...
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| Автори: | , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley
2022-01-01
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| Серія: | Advances in Condensed Matter Physics |
| Онлайн доступ: | http://dx.doi.org/10.1155/2022/1506702 |
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