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Reaction Mechanisms during Atomic Layer Deposition of AlF(3) Using Al(CH(3))(3) and SF(6) Plasma
[Image: see text] Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF(6) plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, th...
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| Publicado en: | J Phys Chem C Nanomater Interfaces |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8016095/ https://ncbi.nlm.nih.gov/pubmed/33815650 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.jpcc.0c10695 |
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