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Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
[Image: see text] Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this...
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| izdano v: | J Phys Chem C Nanomater Interfaces |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
American Chemical
Society
2021
|
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8162759/ https://ncbi.nlm.nih.gov/pubmed/34084261 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.jpcc.1c01505 |
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