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Reaction Mechanisms during Atomic Layer Deposition of AlF(3) Using Al(CH(3))(3) and SF(6) Plasma

[Image: see text] Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF(6) plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, th...

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Detalhes bibliográficos
Publicado no:J Phys Chem C Nanomater Interfaces
Main Authors: Vos, Martijn F. J., Knoops, Harm C. M., Kessels, Wilhelmus M. M., Mackus, Adriaan J. M.
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2021
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8016095/
https://ncbi.nlm.nih.gov/pubmed/33815650
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.jpcc.0c10695
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