Cargando...
Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer
Thin films of single-crystal silicon carbide of cubic polytype with a thickness of 40–100 nm, which were grown from the silicon substrate material by the method of coordinated substitution of atoms by a chemical reaction of silicon with carbon monoxide CO gas, have been studied by spectral ellipsome...
Gardado en:
| Publicado en: | Materials (Basel) |
|---|---|
| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2020
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7795334/ https://ncbi.nlm.nih.gov/pubmed/33375252 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14010078 |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|