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Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer
Thin films of single-crystal silicon carbide of cubic polytype with a thickness of 40–100 nm, which were grown from the silicon substrate material by the method of coordinated substitution of atoms by a chemical reaction of silicon with carbon monoxide CO gas, have been studied by spectral ellipsome...
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| Publicado en: | Materials (Basel) |
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| Autores principales: | , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7795334/ https://ncbi.nlm.nih.gov/pubmed/33375252 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14010078 |
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