Kukushkin, S. A., & Osipov, A. V. (2020). Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer. Materials (Basel).
Stile di citazione ChicagoKukushkin, Sergey A., e Andrey V. Osipov. "Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer." Materials (Basel) 2020.
Citazione MLAKukushkin, Sergey A., e Andrey V. Osipov. "Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer." Materials (Basel) 2020.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.