Kukushkin, S. A., & Osipov, A. V. (2020). Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer. Materials (Basel).
Citação norma ChicagoKukushkin, Sergey A., and Andrey V. Osipov. "Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer." Materials (Basel) 2020.
Citação norma MLAKukushkin, Sergey A., and Andrey V. Osipov. "Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer." Materials (Basel) 2020.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.